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Ferroelectric Memories (Relié)
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Résumé
The first comprehensive text on ferroelectric memories, this book by Prof Scott of Cambridge University, author of 300 publications on ferroelectrics and the most cited papers on ferroelectric thin-film science, contains chapters on device design, processing, testing, and device physics - breakdown, leakage currents, switching mechanisms, and fatigue. State of the art device designs are illustrated among the books many figures.
More than 500 up-to-date references and 76 problems for students make it useful both as a research reference and as a text for graduate or advanced undergraduate students.
More than 500 up-to-date references and 76 problems for students make it useful both as a research reference and as a text for graduate or advanced undergraduate students.
Sommaire
- Basic Properties of RAMs (Random Access Memories)
- Electrical Breakdown (DRAMs and NV-RAMs)
- Leakage Currents
- Capacitance-Voltage Data: C(V)
- Switching Kinetics
- Charge Injection and Fatigue
- Frequency Dependence
- Phase Sequences in Processing
- SBT-Family Aurivillius-Phase Layer Structures
- Deposition and Processing
- Nondestructive Read-Out Devices
- Ferroelectrics-on-Superconductor Devices: Phased-Array Radar and 10-100 GHz Devices
- Wafer Bonding
- Electron-Emission and Flat-Panel Displays
- Optical Devices
- Nanophase Devices
- Drawbacks and Disadvantages.
Fiche technique
- Date de parution : 10/05/2000
- Editeur : Springer
- Collection : advanced microelectronics
- ISBN : 3-540-66387-8
- EAN : 9783540663874
- Présentation : Relié
- Nb. de pages : 248 pages
- Poids : 0.48 Kg
- Dimensions : 16,1 cm × 24,1 cm × 1,4 cm
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Ferroelectric Memories
171,15 €